中圖分類號：TN958.7 文獻(xiàn)標(biāo)志碼：A DOI: 10.16157/j.issn.0258-7998.256766
中文引用格式： 張文超，孫嘉慶. 多通道大功率氮化鎵T/R組件模塊散熱技術(shù)研究[J]. 電子技術(shù)應(yīng)用，2025，51(9)：84-89.
英文引用格式： Zhang Wenchao，Sun Jiaqing. Research on heat dissipation technology for multi-channel high power GaN T/R module[J]. Application of Electronic Technique，2025，51(9)：84-89.

Research on heat dissipation technology for multi-channel high power GaN T/R module

Abstract： This paper summarizes the problems and challenges faced in the heat dissipation design of multi-channel high-power T/R module, and analyzes the heat dissipation capabilities of various heat dissipation solutions. Microchannel and manifold microchannel heat dissipation technology has received widespread attention in high heat flux density heat dissipation scenarios, and has become an effective heat dissipation method for high-power, high heat flux density integrated circuits. At the same time, multi-channel flow distribution is an important factor affecting temperature uniformity. Applying the above technology, this paper proposes a design method for heat dissipation solutions for multi-channel T/R component modules and applies it to the design of specific heat dissipation solutions. The Computational Fluid Dynamics(CFD) method is used to analyze, compare and evaluate various solutions. The manifold microchannel and parallel shunt solution embedded in the carrier can effectively solve the cooling problem of multi-channel T/R components with local power density greater than 500 W/cm2, and the thermal resistance and temperature uniformity between channels are less than 2 degrees Celsius.

Key words : GaN；multi-channel；T/R module；microchannel；manifold microchannel；flow distribution