中圖分類號：TN73 文獻標志碼：A DOI: 10.16157/j.issn.0258-7998.244825 中文引用格式： 胡順勇，李凱，張能波，等. Ku波段800 W氮化鎵高線性固態(tài)功放研制[J]. 電子技術(shù)應用，2024，50(6)：71-76. 英文引用格式： Hu Shunyong，Li Kai，Zhang Nengbo，et al. Ku-band 800 W GaN high linear solid-state power amplifier[J]. Application of Electronic Technique，2024，50(6)：71-76.
Ku-band 800 W GaN high linear solid-state power amplifier
Hu Shunyong，Li Kai，Zhang Nengbo，Dang Zhang
The 10th Research Institute of CETC
Abstract： This paper introduces an engineering realization of a Ku-band 800 W GaN high linear solid-state power amplifier. A continuous wave output power of 850 W in 750 MHz operation band is realized by the Gysel power divdider and waveguide based power dividing/combining network with 32 GaN MMIC chips. The RF predistortion linearization technology is used to optimize the linearity of the GaN power amplifier, and the third-order intermodulation of the power amplifier is improved by more than 5 dB, which is better than -32 dBc. The power amplifier adopts a forced air cooling scheme with a heat pipe fin radiator, which improves the heat transfer efficiency of the radiator and has good heat dissipation performance. By monitoring the temperature of the power amplifier chip and automatically configuring the speed of the cooling fan, adaptive thermal management of the power amplifier is achieved, which reduces power consumption while reducing product noise. The power amplifier is equipped with comprehensive control and protection functions and has stable technical status. Two power amplifiers form a 1:1 system, which meets the reliability and practicality requirements for engineering use and is suitable for microwave transmission systems in the fields of measurement and control, communication, broadcasting, and television.
Key words : Ku-band；GaN power amplifier；radio frequency predistortion
