中圖分類號： TN722.3 文獻標識碼： A DOI：10.16157/j.issn.0258-7998.191394 中文引用格式： 王華樹，肖知明，馬偉，等. 基于GaN HEMT寬帶低噪聲放大器設計[J].電子技術應用，2020，46(7)：60-64. 英文引用格式： Wang Huashu，Xiao Zhiming，Ma Wei，et al. Design of broadband low noise amplifier based on GaN HEMT[J]. Application of Electronic Technique，2020，46(7)：60-64.
Design of broadband low noise amplifier based on GaN HEMT
Wang Huashu，Xiao Zhiming，Ma Wei，Hu Weibo
College of Electronic Information and Optical Engineering，Nankai University，Tianjin 300350，China
Abstract： A high linearity wideband low noise amplifier(LNA) was designed using a gallium nitride(GaN) high electron mobility transistor(HEMT) devices to meet the requirements of different communication standards. The LNA uses a two-stage resistor negative feedback structure. In order to achieve low noise, high linearity, wideband and small return loss, the lumped parameter components and microstrip line are used to optimize the input and output matching network of LNA. In the frequency range of 1 to 3 GHz, the simulation results show that the noise figure of the LNA is 2.39～3.21 dB, the input reflection coefficient is less than -10.6 dB, the output reflection coefficient is less than -17.9 dB, the gain is 23.74～25.68 dB, the gain flatness is less than ±0.97 dB, the output 1 dB compression point(OP1dB) is greater than 24.12 dBm, and the output third-order intercept point(OIP3) is greater than 36.55 dBm. The actual test gain is 22.08～26.12 dB, which is basically in accordance with the simulation results.
Key words : low noise amplifier；gallium nitride；high electron mobility transistor；negative feedback
