中圖分類號：TN72 文獻(xiàn)標(biāo)志碼：A DOI: 10.16157/j.issn.0258-7998.245672 中文引用格式： 麻澤龍，吳景峰，余小輝. 基于系統(tǒng)級封裝技術(shù)的X頻段變頻模塊研制[J]. 電子技術(shù)應(yīng)用，2024，50(12)：105-111. 英文引用格式： Ma Zelong，Wu Jingfeng，Yu Xiaohui. Development of X-band RF transceiver module with system in package technology[J]. Application of Electronic Technique，2024，50(12)：105-111.
Development of X-band RF transceiver module with system in package technology
Ma Zelong，Wu Jingfeng，Yu Xiaohui
The 13th Research Institute of China Electronics Technology
Abstract： A miniaturized X-band dual-channel radio frequency(RF) transceiver module is designed by using system in package(SiP) technology, which integrates devices based on a variety of process. Receiving channel and transmitting channel are integrated into a cavity, and time-sharing control for transmitting and receiving is achieved. Double-cavity structure is used and different cavities are vertically interconnected through the ball grid arrays to reduce the module size significantly. The size of SIP module is 21 mm×16 mm×3.8 mm. The main measured technical specifications of the modules are as follows: The P-1dB of receiving channel ≤-10 dBm, receiving signal gain 30～35 dB, isolation degree of the receiving channel ≥55 dB, receiving noise figure ≤8 dB; gain of transmission channel 10～12 dB, maximum output power of transmission channel ≥12 dBm, second and third harmonic suppression ≥60 dBc, clutter rejection ≥55 dBc, the module can function properly within the temperature range of -55～+85 ℃. The measured results are basically agreed with the simulation results.
Key words : X-band；RF transceiver system；system in package；BGA ball grid arrays
引言
系統(tǒng)級封裝技術(shù)（System in Package，SiP）是將多個具有不同功能的有源電子器件與無源元件等其他器件組裝成為可以提供多種功能的單個標(biāo)準(zhǔn)封裝件，形成一個系統(tǒng)或者子系統(tǒng)[1]。相較于片上系統(tǒng)（System on Chip，SoC），系統(tǒng)級封裝的最大優(yōu)勢就是可以采用具有不同工藝（CMOS、Bi-CMOS等）和封裝技術(shù)（MCM）的器件制作出具有不同功能（發(fā)射接收通道、耦合器、頻率源）的系統(tǒng)[2]，充分發(fā)揮各工藝的優(yōu)勢，且可以降低研發(fā)周期，節(jié)約成本[3]。射頻SiP是SiP模塊的一個重要研究方向[4]，主要基片類型包括硅基、低溫共燒陶瓷（Low Temperature Co-fired Ceramic，LTCC）以及多層板等，芯片連接類型包括倒裝、芯片層疊，封裝類型包括球柵陣列（Ball Grid Array，BGA）、柵格陣列（Land Grid Array，LGA）等[5]。在文獻(xiàn)[6]中研究人員設(shè)計了一款基于SiP技術(shù)工作頻段為8~12 GHz的收發(fā)模塊[6]，內(nèi)部集成了高功率放大器、低噪聲放大器、單片微波集成芯片、單刀雙擲開關(guān)等器件，不同層間通過接插件連接，尺寸僅為13.8 mm×13.8 mm×6.1 mm。
